Hot hole-induced device degradation by drain junction reverse current
نویسندگان
چکیده
Components of drain leakage currents in the off-state of MOSFET are gate-induced drain-leakage (GIDL) and drain junction reverse currents. Device degradation phenomenon and mechanism by GIDL have been well known, but those by drain junction reverse current (IDJR). have not. In this paper, device degradation mechanisms by drain junction reverse current in the off-state were studied through I-V curves (VTH and mobility) and charge pumping technique.
منابع مشابه
Vacuum gate dielectric gate-all-around nanowire for hot carrier injection and bias temperature instability free transistor
Articles you may be interested in Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors Appl. Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors Appl. Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors Appl. D...
متن کاملA Comprehensive Study of Hot Carrier Stress-Induced Drain Leakage Current Degradation in Thin-Oxide n-MOSFET’s
The mechanisms and characteristics of hot carrier stress-induced drain leakage current degradation in thinoxide n-MOSFET’s are investigated. Both interface trap and oxide charge effects are analyzed. Various drain leakage current components at zero V gs such as drain-to-source subthreshold leakage, band-to-band tunneling current, and interface trapinduced leakage are taken into account. The tra...
متن کاملHole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides
Hot-carrier reliability is studied in core logic PMOSFETs with a thin gate-oxide (Tox 1⁄4 2 nm) and in Input/Output PMOSFETs with a thick gate-oxide (6.5 nm) used for systems on chip applications. Hot-hole (HH) injections are found to play a more important role in the injection mechanisms and in the degradation efficiency. This depends on the technology node for stressing voltage conditions cor...
متن کاملNew Hot-Carrier Degradation Mechanism for MOSFET Devices Using Two-Type Interface-State Model
We have studied the characteristics of MOSFET degradation induced by hotcarriers. When the characteristics of drain current degradation (A/j) are applied to the stress time(t) dependence AIj oc t, the exponent n is clearly different under different bias conditions. We present a two-type interface-state model composed of deep-energy interface states and shallow-energy interface states which have...
متن کاملA Power Law Model for Assessment of Hot Electron Reliability in GaAs MESFETs and AlGaAs/InGaAs pHEMTs
Hot electron reliability experiments were conducted on four GaAs FET processes. Observed device degradation was similar to the results reported by other authors (e.g. decrease of the open channel current, and a rightward shift and compression of the transconductance curve). While the degradation modes were the same for all four processes, the degradation rates were not. These results have led u...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 53 شماره
صفحات -
تاریخ انتشار 2013